Analyses of HF/NH4F buffer-treated Si(111) surfaces using XPS,REM and SIMS

The effect of different cleaning procedures on Si(111) wafers has been studied. A three-step cleaning process was used. The first two steps (thermal oxidation followed by RCA cleaning) were common to all samples. The final step involved rinsing in one of a set of HF/NH4F buffer solutions with a wide range ofpH values. Three different surface techniques were used for characterizing the chemical condition and morphology of the treated surfaces: XPS (X-ray Photoemission Spectroscopy), REM (Reflection Electron Microscopy) and SIMS (Secondary-Ion Mass Spectroscopy). It has been found that thepH value of an HF solution does significantly affect the etching rate and morphology of the Si(111) surface: For the same type of solution, the smaller thepH value, the higher the etching rate. Basic solutions withpH values larger than eight have a much weaker etching effect on the surface, which is contradictory to some previous reports. The most effective solutions for the etching of the Si(111) surface are the solutions of HF buffered by NH₄F, with thepH in the range of 2–6. REM images indicate that the surface morphology after etching in the HF solution is strongly affected by the length of the etching time: Overetching will roughen the surface. The SIMS data show that water rinsing in air during the cleaning process does speed up oxidation, but it is necessary to use water to clean off the residuals from the HF solutions.