New aspects of HCI test for ultra-short channel n-MOSFET devices |
| |
Authors: | Ma Xiao-Hu Hao Yue Wang Jian-Ping Cao Yan-Rong and Chen Hai-Feng |
| |
Institution: | Microelectronics Institute, Xidian University, Xi'an 710071, China; Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University, Xi'an 710071, China; Logic Technology Development Center, SMIC, Shanghai 201203, China |
| |
Abstract: | Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET
devices were studied. The experimental data of short channel devices
(75--90\,nm), which does not fit formal degradation power law well,
will bring severe error in lifetime prediction. This phenomenon
usually happens under high drain voltage ($V_{\rm d}$) stress
condition. A new model was presented to fit the degradation curve
better. It was observed that the peak of the substrate current under
low drain voltage stress cannot be found in ultra-short channel
device. Devices with different channel lengths were studied under
different $V_{\rm d}$ stresses in order to understand the relations
between peak of substrate current ($I_{\rm sub}$) and channel
length/stress voltage. |
| |
Keywords: | HCI n-MOSFET short channel |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|