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半导体超晶格子带间跃迁的光学双稳
引用本文:赵国忠,潘少华.半导体超晶格子带间跃迁的光学双稳[J].物理学报,1996,45(6):929-939.
作者姓名:赵国忠  潘少华
作者单位:中国科学院物理研究所,北京100080
摘    要:运用Kronig-Penney(KP)模型的新形式,研究半导体超晶格中子带间跃迁的光学双稳特性。由二子能带模型密度矩阵方法,导出了子带间光跃迁的Maxwell-Bloch(MB)方程。从MB方程的定态解出发,得到了环形腔中超晶格子带间跃迁的光学双稳态方程,进而讨论了这种光学双稳的特点以及实现的条件。 关键词

关 键 词:半导体  超晶格  带间跃迁  光学双稳
收稿时间:1995-01-25

OPTICAL BISTABILITY OF INTERSUBBAN TRANSITIONS IN A SEMICONDUCTOR SUPERLATTICE
ZHAO GUO-ZHONG and PAN SHAO-HUA.OPTICAL BISTABILITY OF INTERSUBBAN TRANSITIONS IN A SEMICONDUCTOR SUPERLATTICE[J].Acta Physica Sinica,1996,45(6):929-939.
Authors:ZHAO GUO-ZHONG and PAN SHAO-HUA
Abstract:The optical bistability (OB) of intersubband transitions in a semiconductor superlattice is stu -died by applying the general formalism of the Kronig-Penney model and density matrix method. The Maxwell-Bloch (MB) equations of two-subband model are derived, and the OB state equation for a ring cavity is obtained from the stationary solution of the MB equations. The conditions for realizing the OB and its characteristics are discussed.
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