| InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究 |
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| 引用本文： | 俞谦,王健华,李德杰,王玉田,庄岩,姜炜,黄绮,周钧铭.InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究[J].物理学报,1996,45(2):274-282. |
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| 作者姓名： | 俞谦 王健华 李德杰 王玉田 庄岩 姜炜 黄绮 周钧铭 |
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| 作者单位： | (1)清华大学电子工程系集成光电子学国家重点实验室,北京100084; (2)中国科学院半导体研究所国家光电子工艺中心,北京100083; (3)中国科学院物理研究所,北京100080 |
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| 基金项目： | 国家自然科学基金资助的课题 |
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| 摘 要： | 通过吸收光电流谱的测量.观察到用国产MBE设备生长的与InP衬底晶格匹配的In-GaAs/InAlAs多量子阱结构的量子限制Stark效应及其与光偏振方向有关的各向异性电吸收特性.报道了可用于波导型调制器制作的MQW样品材料的X射线双晶衍射结果,并用计算机模拟出与实测十分相似的曲线,得到了可靠的量子阱结构参数,证明样品材料具有优良的外延质量.利用等效无限深阱模型进行的理论计算表明,应考虑样品p-i-n结内建电场的影响,才能使算出的吸收边红移与实验值符合.
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| 关 键 词： | INGaAs 多量子阱 量子尺寸效应 |
| 收稿时间： | 1994-10-19 |
STUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES |
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| YU QIAN,WANG JIAN-HUA,LI DE-JIE,WANG YU-TIAN,ZHUANG YAN,JIANG WEI,HUANG YI and ZHOU JUN-MING.STUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES[J].Acta Physica Sinica,1996,45(2):274-282. |
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| Authors: | YU QIAN WANG JIAN-HUA LI DE-JIE WANG YU-TIAN ZHUANG YAN JIANG WEI HUANG YI and ZHOU JUN-MING |
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| Abstract: | The quantum confined stark effect of InGaAs/InAlAs MQW heterostructures lattice-matched to InP substrate, grown by Chinese-built molecular beam epitaxy (MBE) system, is observed by absorption photocurrent spectra measurements, as well as the anisotropic elec-troabsorption of MQWs. The structure parameters of the epitaxied materials, which can be used to fabricate waveguide MQW electroabsorption modulators, were determined from double crystal X-ray diffraction measurements and computer simulations. The theoretical calculations of absorption-edge red shift compared with experimental results shows that the built-in-potential of the p-i-n junction can not be neglected. |
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