电极处势垒对新结构器件电子输运的影响

在新结构薄膜电致发光器件中,电极处的势垒的高度决定电子的注入数量.在电极界面处插入不同的薄膜材料,可以改变势垒的高度,并对电子注入数量和器件的发光亮度产生影响.通过拟合计算得到ZnO/SiO,ITO/SiO的界面势垒高度分别为0.51和1.87eV. 关键词：

THE INFLENCE OF ELECTRON BARRIER HEIGHT AT ELECTRODE ON ELECTRON TRANSPORT IN NEW DEVICE

The influence of electronic barrier heights on the quantity of injection charge and electroluminescence (EL) in newly designed devices have been studied. By sandwithing Y₂O₃, ZnO thin films in between ITO and SiO or Al and ITO, we could change the electron barrier height and the quantities of the injection charges. It is found that Y₂O₃ film is a good electron barrier film, we sandwithed it in between Al and SiO layers and between ITO and SiO, respectively, and measured the injection charges data with different applied volotage. Using the Fowler-Nordeim tunneling current equation, the electron barrier height at SiO/Al 3.0 eV and at SiO/ITO 1.85 eV were obtained. The ZnO is a conducting film, the electron barrier height were reduced if sandwith it between Al and SiO layers or between ITO and SiO layers, by using the same method, we obtained the electron barrier height at ZnO/SiO, which is 0. 5 eV. The EL intensities of above devices have been measured and found that increasing the quantities of injection charges may increase the EL intensities in these new devices.