MPS结构中的光生伏特现象

报道了金属／多孔硅／单晶硅结构（ＭＰＳ）中光生伏特效应研究的最新结果，给出了该结构的光谱响应曲线，发现该结构在１１００—３５０ｎｍ波长范围具有明显的光谱响应．还测量了开路电压随温度、光照波长及光照强度的变化关系，发现开路电压随温度的降低近似线性增加，其温度系数对于金／多孔硅结构约为２.０ｍＶ／Ｋ，对于铝／多孔硅结构约为２.８ｍＶ／Ｋ，与单晶硅及非晶硅太阳电池的温度系数相近，但ＭＰＳ结构的开路电压随光强的增加不满足对数关系．结果表明，在ＭＰＳ结构中金属／多孔硅肖特基结对光生伏特效应起了主要作用，而多孔硅／单晶硅异质结的作用是与此相反的 关键词：

PHOTOVALTAIC EFFECT IN MPS STRUCTURE

In this paper, we report the recent results about photovoltaic effects in a metal (Al or Au)/porous silicon(MPS)structure. We have given the spectral response curves of the Schottky diode structures of the first time, and investigated the dependences of the open circuit voltage on the incident light intensity and the measurement temperature. The results obtained show that the Schottky junction between the metal and the porous silicon layer should be the principal source of the photovoltaic actions, while the heterojunction between the porous silicon layer and the silicon substrate could impede the transport of the forward current in this structures. It is also found that the open circuit voltage increases linearly with decreasing of temperature in the range of 300—120K and the temperature coefficient is ～2.0mV/K and ～2.8mV/K for Au/PS and Al/PS diodes, respectively.