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Ag在Si(111)表面二维生长有序化动力学研究
引用本文:李明,徐明,刘惠周.Ag在Si(111)表面二维生长有序化动力学研究[J].物理学报,1996,45(8):1380-1389.
作者姓名:李明  徐明  刘惠周
作者单位:中山大学物理系,广州510275;中山大学物理系,广州510275;中山大学物理系,广州510275
基金项目:国家自然科学基金资助的课题.
摘    要:利用自制的高分辨率衍射斑角分布测量仪对低能电子衍射斑进行测量,研究Ag在Si(111)表面的有序化规律.结果表明,Ag31/2畴在生长过程中,满足标度不变性,是一种自相似的生长过程,在生长初期,它的生长指数近似为1/2,并提出了Ag从Ag(111)岛向外扩散形成Ag31/2畴的生长机制.还提出利用光助退火以在较低温度下获得完善的表面结构.

关 键 词:硅表面  外延    二维生长  有序化
收稿时间:1995-03-30

KINETICS OF ORDERING AND 2-DIMENSIONAL GROWTH OF Ag ON Si(111)
LI MING,XU MING and LIU HUI-ZHOU.KINETICS OF ORDERING AND 2-DIMENSIONAL GROWTH OF Ag ON Si(111)[J].Acta Physica Sinica,1996,45(8):1380-1389.
Authors:LI MING  XU MING and LIU HUI-ZHOU
Abstract:We have studied the ordering processes of Ag on Si (111) by LEED using a homemade high re-solution spot profile measuring equipment. The results show that the growth processes of Ag 31/2 domain satisfy scaling symmetry. They are self-similar growth processes. The studies also show that the growth exponent is near 1/2 in the early stage of the growth processes. We propose a growth mechanism of Ag diffusing from Ag(111) islands to form Ag 31/2 domains. This article also suggests a way to obtain perfect surface structures in lower temperature by using light-assisted anneal.
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