| 氢化非晶硅的低温输运 |
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| 引用本文： | 朱美芳. 氢化非晶硅的低温输运[J]. 物理学报, 1996, 45(3): 499-505 |
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| 作者姓名： | 朱美芳 |
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| 作者单位： | 中国科学技术大学研究生院物理系,北京100039 |
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| 摘 要： | 从低温跳跃电导模型出发,计算低温下的跳跃频率,热发射率及输运能级随温度变化,分析讨论了非晶硅热激电导的低温峰。认为输运机制的变化是氢化非晶硅热激电导低温峰TM独立于起始温度T0的主要原因,TM相应于输运机制变化的温度。关键词：
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| 关 键 词： | 氢化非晶硅 低温 输运 跳跃频率 热发射率 |
| 收稿时间： | 1994-11-18 |
TRANSPORT IN HYDROGENATED AMORPHOUS SILICON AT LOW TEMPERATURES |
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| ZHU MEI-FANG. TRANSPORT IN HYDROGENATED AMORPHOUS SILICON AT LOW TEMPERATURES[J]. Acta Physica Sinica, 1996, 45(3): 499-505 |
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| Authors: | ZHU MEI-FANG |
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| Abstract: | Thermally stimulated conductivity (TSC) theory based on multiple trapping(MT) model in amorphous semiconductors is limited to explain TSC in a-Si: H at low temperatures in which the low temperature peak of TSC σTSC( TM) is independent of the starting temperature T0. TM is pinked. In this paper, a model of the hopping conduction with the transport energy Et in the band tail is proposed to understand the behavior of the low temperature TSC. Hopping frequency, thermal emission rate and temperature dependence of Et were calculated. TM is suggested to be corresponding to a change of the transport mechanism from hopping conduction to MT model. |
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