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CN薄膜结构特性的研究
引用本文:冯嘉猷,龙春平,张芳伟,郑毅,范玉殿. CN薄膜结构特性的研究[J]. 物理学报, 1996, 45(6): 1068-1072
作者姓名:冯嘉猷  龙春平  张芳伟  郑毅  范玉殿
作者单位:清华大学材料科学与工程系,北京100084
基金项目:国家自然科学基金资助的课题
摘    要:利用离化团束(ICB)方法在Si(111)衬底上生长了CN薄膜。X光衍射(XRD)分析表明薄膜呈β-C3N4晶态结构,X射线光电子能谱(XPS)测定薄膜含N量为20%,并且观察到C1s和N1s芯能级谱中存在双峰。红外吸收光谱呈现C—N和C≡N的吸收峰。高能反射式电子衍射(RHEED)也证实薄膜中存在晶态物质。薄膜的努氏显微硬度值达到6200kgf·mm-2关键词

关 键 词:薄膜 CN膜 结构 XRD ICB
收稿时间:1994-12-09

STRUCTURAL CHARACTERIZATION OF THE CN FILMS
FENG JIA-YOU,LONG CHUN-PING,ZHANG FANG-WEI,ZHENG YI and FAN YU-DIAN. STRUCTURAL CHARACTERIZATION OF THE CN FILMS[J]. Acta Physica Sinica, 1996, 45(6): 1068-1072
Authors:FENG JIA-YOU  LONG CHUN-PING  ZHANG FANG-WEI  ZHENG YI  FAN YU-DIAN
Abstract:Growth of CN films on Si (111) is realized by ionized cluster beam (ICB) deposition. X-ray diffraction (XRD) shows the occurence of β-C3N4 crystal structure in the films. X-ray photoelectron spectra (XPS) shows 20% N incorporated into the films and two peaks are observed in C1s and N1s, core level spectra respectively. Single bonded CN and triple bonded CN were identifies by infrared absorption spectra. Reflection high-energy electron diffraction (RHEED) demonstracted the coexistence of amorphous and crystalline CN compounds. The Knoop hardness of CN films reaches 6200 kgf/mm2.
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