| 调制掺杂的应变In0.60Ga0.40As/In0.52Al0.48As多量子阱结构的光致发光谱研究 |
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| 引用本文： | 沈文忠,唐文国,常勇,李自元,沈学础,A. DIMOULAS. 调制掺杂的应变In0.60Ga0.40As/In0.52Al0.48As多量子阱结构的光致发光谱研究[J]. 物理学报, 1996, 45(2): 307-313 |
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| 作者姓名： | 沈文忠 唐文国 常勇 李自元 沈学础 A. DIMOULAS |
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| 作者单位： | (1)Foundation for Research and Technology-Hellas,P. O.Box 1527,Heraklion 71110,Crete,Greece; (2)中国科学院红外物理国家重点实验室,上海200083 |
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| 摘 要： | 报道了调制掺杂的应变In0.60Ga0.40As/In0.52Al0.48As多量子阱中室温光致发光光谱.观察到n=1和2电子子带到n=1重空穴子带的强发光峰.在低温下可以观察到n=1电子子带到n=1轻空穴弱发光肩胛.通过对发光强度随激发功率及温度依赖关系以及理论模型的分析研究,认为该调制掺杂量子阱中辐射复合效率降低的主要机制是应变失配位错对载流子的陷阱作用.界面上的失配位错是陷阱的主要来源.并用静态的光致发光理论模型关键词：
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| 关 键 词： | 光谱 调制掺杂 多量子阱结构 光致发光 |
| 收稿时间： | 1994-10-10 |
PHOTOLUMINESCENCE STUDIES OF MODULATION -DOPED STRAINED In0.60Ga0.40As/In0.52Al0.48As QUANTUM WELLS |
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| SHEN WEN-ZHONG,TANG WEN-GUO,CHANG YONG,LI ZI-YUAN,SHEN XUE-CHU and A. DIMOULAS. PHOTOLUMINESCENCE STUDIES OF MODULATION -DOPED STRAINED In0.60Ga0.40As/In0.52Al0.48As QUANTUM WELLS[J]. Acta Physica Sinica, 1996, 45(2): 307-313 |
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| Authors: | SHEN WEN-ZHONG TANG WEN-GUO CHANG YONG LI ZI-YUAN SHEN XUE-CHU A. DIMOULAS |
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| Abstract: | The room-temperature photoluminescence (PL) spectrum of the modulation-doped strained In0.60Ga0.40As/In0.52Al0.48As multiple quantum wells (MQW) is reported. In addition to two strong PL peaks related to the recombination between electrons in the first (n = 1), second ( n = 2) subbands and heavy holes in the first ( n = 1) subband, a weak PL shoulder related to the recombination between n = 1 electrons and n = 1 light holes is obsevered at low temperatures. We demonstrate that the main mechanism of the decrease in radiative QW recombination efficiency is due to the carrier trapping on the misfit dislocations, based on the temperature and excitation power dependence of the PL peak intensity and energy and the steady-state PL model. |
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