Improvement of cubic silicon carbide crystals grown from solution |
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Authors: | J Eid JL Santailler B Ferrand A Basset A Passero R Lewandowska C Balloud J Camassel |
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Institution: | aLETI/DOPT, CEA-Grenoble, 17 Rue des Martyrs 38054 Grenoble, France;bGroupe d’Etude des Semi-conducteurs, Université Montpellier 2 and CNRS, cc074-GES, 34095 Montpellier Cedex 5, France |
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Abstract: | Cubic-silicon carbide crystals have been grown from carbon-rich silicon solutions using the travelling-zone method. To improve the growth process, we investigated the effect of controlling more tightly some of the growth parameters. Using such improved growth conditions, our best sample is a 12 mm diameter and 3 mm long 3C–SiC crystal. It is grown on a (0001) 2 off, 6H–SiC seed and has 111-orientation. The low amount of silicon inclusions results in a reduced internal stress, which is demonstrated by the consideration of μ-Raman spectra collected at room temperature on a large number of samples. |
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Keywords: | Cubic silicon carbide Travelling zone method Solution growth Raman spectroscopy |
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