Oxygen diffusion barriers using a new sacrificial design concept for future high-density memory devices |
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Authors: | DS Yoon JS Roh |
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Institution: | (1) Advanced Process-Capacitors, Memory Research & Development Division, Hynix Semiconductor Inc., Kyoungki-do, 467-701, Korea, KR |
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Abstract: | We emphasize the importance of the new design concept for diffusion barriers in high-density memory capacitors. RuTiN and
RuTiO films are proposed as sacrificial oxygen diffusion barriers. They showed much lower sheet resistance up to 800 °C than
various barriers including binary and ternary nitrides, reported by others. The contact resistance for both the Pt/RuTiN/TiSix/n++poly-plug/n+channel layer/Si and the Pt/RuTiO/RuTiN/TiSix/n++poly-plug/n+channel layer/Si contact structures, the most important electrical parameter for the diffusion barrier in the bottom-electrode
structure of capacitors, exhibited values as low as 5 kΩ, even after annealing up to 750 °C. When each RuTiN and TiN film
is inserted as a glue layer between the bottom electrode Pt layer in the CVD–BST simple stack-type structure, the thermal
stability of the RuTiN glue layer is observed to be 150 °C higher than that of the TiN glue layer. Moreover, the capacitance
of the PVD–BST simple stack-type structure with a TiN glue layer initially degrades after annealing at 500 °C, and thereafter
failed completely. In the case of RuTiN and the RuTiO/RuTiN glue layers, however, the capacitance continuously increased up
to 550 °C. These new experimental results accommodate the introduction of the sacrificial design concept of diffusion barriers
against oxygen in high-density memory capacitors.
Received: 6 February 2002 / Accepted: 4 March 2002 / Published online: 26 February 2003
RID="*"
ID="*"Corresponding author. Fax: +82-31/360-4545, E-mail: dongsoo.yoon@hynix.com |
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Keywords: | PACS: 66 10 Ch 66 30 Jt 66 30 Ny 66 30 -h |
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