Deposition of silicon nitride thin films by reaction of SiH4 in a nitrogen post-discharge

Silicon nitride thin films are deposited on silicon wafers at room temperature when silane gas is injected in a nitrogen flowing post-discharge. Reactive processes involving siane molecules and long-lifetime nitrogen species are studied, pointing out the nonreactivity of the N₂(A³_u⁺) metastable state, the low contribution of the vibrationally excited nitrogen ground-state molecules, and the high reactivity of N(⁴S) atoms. Spectroscopic observations performed in the reaction region are correlated with thin-film characteristics.