Diffusion of selenium and tellurium in silicon

Diffusion of selenium and tellurium in silicon has been investigated in the temperature range 1000°C to 1310°C by sheet conductivity. For SiSeD ₀= 0.3±0.1 cm²/s andh=2.6±0.1 eV, and for SiTeD ₀=0.9±0.3 cm²/s and h=3.3±0.1eV have been obtained. The surface concentrations for both dopants were of the order of 5 × 10¹³ to 6×10¹⁶cm^–3. The Hall coefficient leads to an energy level of 300±15meV for selenium and 200±20meV for tellurium.