Radiation-induced conduction in quantum-confined p
+-n silicon junctions |
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Authors: | A N Andronov S V Robozerov N T Bagraev L E Klyachkin A M Malyarenko |
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Institution: | (1) St. Petersburg State Technical University, 195251 St. Petersburg, Russia;(2) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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Abstract: | Electron-beam diagnostics are used to study the radiation-induced conduction of supershallow p
+-n silicon junctions obtained by nonequilibrium boron diffusion. Current-voltage (I–V) characteristics of radiation-induced conduction of a both forward-and reverse-biased p
+-n junction are demonstrated for the first time, which has been made possible by the presence of self-organized transverse quantum
wells inside a supershallow p
+ diffusion profile. The variation of the dark-current I–V characteristics with electron irradiation dose shows that formation of self-organized longitudinal quantum wells inside supershallow
p
+ diffusion profiles favors an increase of the breakdown voltage in p
+-n silicon junctions.
Fiz. Tverd. Tela (St. Petersburg) 41, 1871–1874 (October 1999) |
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