X-ray rocking curves on inhomogeneous surface layers on Si single crystals

Two cases of inhomogeneous surface layers are considered — diffusion layers as well as implanted layers. The parameters of the layers are investigated by means of an X-ray rocking curve analysis. In this paper the concentration profile of a diffusion layer in Si is determined from X-ray rocking curves, the rocking curves on implanted layers will be discussed in the next paper. A graph is constructed for determining approximate values of surface concentrationC ₀ and diffusion lengthL from subsidiary maxima on the X-ray rocking curve. The dependence of the shape of the rocking curves on the type of the concentration profile and on the values ofC ₀ andL was shown. The influence of crystal thickness and curvature is studied theoretically and experimentally. As an example of using this method a rocking curve of a crystal with a boron diffusion layer is measured and the parameters of the concentration profile are determined. The parameters found are proved by multiplied measurement of rocking curves after anodic oxidation and by comparing these rocking curves with theoretical ones.