Specific features of the three-electron KL2, 32 ionization of silicon atoms upon near-threshold photoabsorption

The shape and relative intensity of the group of the Kα_5–8 satellites (radiative transitions KL _{2, 3} ² )-L _{2, 3} ³ of Si atoms are experimentally studied upon photoabsorption near and far from the KL _{2, 3} ² ionization threshold. The satellites were excited near the ionization threshold by lines of the characteristic L spectrum and bremsstrahlung radiation from Nb and Mo anodes and far from the threshold by the L spectrum and bremsstrahlung radiation from an Ag anode and by monochromatized Kα_{1, 2} radiation from a Ti anode. It is established that the probability P(L _{2, 3} ² ) of formation of two additional 2p vacancies during KL _{2, 3} ² photoabsorption of Si atoms near the energy threshold is by a factor of 1.5 lower than that during photoionization in a more distant energy region beyond the threshold. At the same time, the P(L _{2, 3} ² )/P(L _{2, 3}) ratio remains invariable for the absorbed photons throughout the energy range studied. It is demonstrated that, as the KL _{2, 3} ² ionization threshold is approached, an intensity redistribution occurs among the components of the group of the Kα_5–8 lines, which reflects a decrease in the excitation cross section ratio σ(⁴ P)/σ(² P) of the ⁴ P and ² P terms of the KL _{2, 3} ² configuration. A conclusion is drawn that the effects of suppression of the generation of P terms of higher multiplicity during the KL _{2, 3} and KL _{2, 3} ² near-threshold photoionizations are of a common nature.