UV absorption in metal decorated boron nitride flakes: a theoretical analysis of excited states |
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Authors: | Siddheshwar Chopra Felix Plasser |
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Institution: | 1. Department of Physics, AIAS, Amity University, Noida, India;2. Institute for Theoretical Chemistry, Faculty of Chemistry, University of Vienna, Vienna, Austria |
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Abstract: | The excited states of single metal atom (X = Co, Al and Cu) doped boron nitride flake (MBNF) B15N14H14-X and pristine boron nitride (B15N15H14) are studied by time-dependent density functional theory. The immediate effect of metal doping is a red shift of the onset of absorption from about 220 nm for pristine BNF to above 300 nm for all metal-doped variants with the biggest effect for MBNF-Co, which shows appreciable intensity even above 400 nm. These energy shifts are analysed by detailed wavefunction analysis protocols using visualisation methods, such as the natural transition orbital analysis and electron-hole correlation plots, as well as quantitative analysis of the exciton size and electron-hole populations. The analysis shows that the Co and Cu atoms provide strong contributions to the relevant states whereas the aluminium atom is only involved to a lesser extent. |
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Keywords: | Boron-nitride TDDFT excited state analysis NTO charge transfer |
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