Atomic flux divergence in bamboo line for predicting initial formation of voids and hillocks

A calculation method of the atomic flux divergence due to electromigration, AFD_gen, has been proposed considering two-dimensional distributions of current density and temperature and also simply considering the line structure of not only polycrystalline line but also bamboo line. The validity of AFD_gen for bamboo lines has been verified in comparison of void formation calculated by using AFD_gen with experimental results, and it has been shown that void formation in bamboo line is able to be predicted by using AFD_gen. In this study, angled bamboo lines are treated for prediction of hillock formation, and hillock formation predicted by using AFD_gen is compared with that measured in experiment. In addition to the verification of void prediction, the usefulness of the prediction method for electromigration damage using AFD_gen is discussed in more detail.