| Znse:Al电学性能的研究 |
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| 引用本文： | 王吉丰 黄锡珉. Znse:Al电学性能的研究[J]. 发光学报, 1995, 16(2): 149-152 |
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| 作者姓名： | 王吉丰 黄锡珉 |
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| 作者单位： | 1. 中国科学院长春物理研究所, 长春130021;2. 天津理工学院材料物理研究所, 天津300191 |
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| 摘 要： | 本文研究了77～300K温度区间内ZnSe:Al的电学性能,讨论了ZnSe:Al中的缺陷及其补偿比,得出了随掺杂温度的升高,极化光学声子对载流子的散射作用变弱,电离杂质对载流子的散射作用变强的结论。同时,本文也给出了霍尔系数、载流子浓度与掺杂温度及测量温度的关系,计算了Al施主能级的电离能。
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| 关 键 词： | ZnSe:Al 缺陷 补偿比 散射机理 |
| 收稿时间： | 1994-12-19 |
STUDY ON ELECTRICAL PROPERTIES OF ZnSe:Al |
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| Wang Jifeng,Huang Ximin,Zhang Zhishun,Xu Xurong. STUDY ON ELECTRICAL PROPERTIES OF ZnSe:Al[J]. Chinese Journal of Luminescence, 1995, 16(2): 149-152 |
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| Authors: | Wang Jifeng Huang Ximin Zhang Zhishun Xu Xurong |
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| Affiliation: | 1. Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021;2. Institute of Material Physics, Tianjin Institute of Technology, Tianjin 300191 |
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| Abstract: | Electrical properties of ZnSe:Al have been measured by the method of Van de Pauw from 77K to 300K. Defects in ZnSe:Al have been discussed and compensatingratio has been calculated.Optical phonon seatting to carrier becomes week and ionized impurity seatting becomes strong with the increase of doping temperature.Hall parameters, carrier concentration and Al ionized energy in ZnSe: Al were also calculated in this paper. |
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| Keywords: | ZnSe:Al defect compensating ratio seatting mechanism |
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