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Short-range order evolution in S-rich Ge-S glasses by X-ray photoelectron spectroscopy
Authors:R. Golovchak  O. Shpotyuk  S. Kozyukhin  A. Kovalskiy
Affiliation:
  • a Lviv Scientific Research Institute of Materials of SRC “Carat”, 202 Stryjska str., Lviv, UA-79031, Ukraine
  • b Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195, USA
  • c Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa, PL-42201, Poland
  • d Institute of General and Inorganic Chemistry of RAS, 31 Leninsky Pr., Moscow, RU-199991, Russia
  • e Lviv Polytechnic National University, 12 Bandery str., Lviv, UA-79013, Ukraine
  • Abstract:The structure of binary GexS100 − x chalcogenide glasses (10 < x < 30) is determined by high-resolution X-ray photoelectron spectroscopy (XPS). On the basis of compositional dependence of fitting parameters for Ge and S core level XPS spectra, the ratio between edge- and corner-shared tetrahedra is determined. It is shown that short-range order of these glasses includes fragments of high-temperature crystalline form of GeS2. When subjected to X-irradiation, the structure of investigated glasses appears to become more homogeneous than that of the as-prepared samples.
    Keywords:Chalcogenide glass   Electronic and atomic structure   XPS
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