Electronic-thermal switching and memory in chalcogenide glassy semiconductors |
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Authors: | N.A. Bogoslovskij K.D. Tsendin |
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Affiliation: | Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia |
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Abstract: | A constant value of the activation energy of direct current conductivity in chalcogenide glassy semiconductors is a strong evidence of the existence of negative-U centers in these materials. Multiphonon tunnel ionization of negative-U centers in strong electric fields is the cause of current-voltage characteristic nonlinearity. Taking into account the Joule heating allows to obtain electronic-thermal instability and then form an S-shaped current-voltage characteristic. The model described in this paper is in good agreement with the available experimental data on chalcogenide glassy semiconductors. |
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Keywords: | Chalcogenide glassy semiconductors Negative-U centers Multiphonon tunnel ionization Memory |
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