Development of porous silicon matrix and characteristics of porous silicon/tin oxide structures

Porous silicon (PSi) was formed at different current densities in the range of 5-60 mA/cm² by electrochemical anodized etching in HF for different durations in the range of 10-30 min. Above this PSi structure, SnO₂ films were deposited by the spin coating technique. The PSi has been characterized by X-ray diffraction studies. Peaks pertaining to PSi along with those corresponding to SnO₂ are observed. Atomic force microscopic studies indicate that very fine needle like silicon nanostructures are observed which is the result of the best PSi structure formed at 30 mA/cm². For the SnO₂ covered PSi structures, larger grains are observed with uniform coverage. The PSi samples prepared at current densities above and below 30 mA/cm² show PL spectra with asymmetric and overlapped peaks. The PL profile of thin SnO₂ film coated on PSi shows a peak at 633 nm and a small hump at about 660 nm.