Order and disorder in edge-supported pure amorphous Si and pure amorphous Si on Si(001) |
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| Authors: | R. Xie S.J. Weigand S. Roorda |
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| Affiliation: | a X-ray Science Division, Argonne National Laboratory, Argonne, IL 60439, USAb DuPontNorthwesternDow Collaborative Access Team Synchrotron Research Center, Northwestern University, Argonne National Laboratory, Argonne, IL 60439, USAc Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USAd Département de Physique, Université de Montréal, Montréal, Québec, Canada, H3C 3J7 |
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| Abstract: | We report results from an investigation into hidden anisotropy in pure fully-dense amorphous silicon. For amorphous silicon in intimate contact with a crystalline Si(001) substrate, one can reasonably expect that the interface with the substrate may impose anisotropy in the form of distorted ordering within the film. Indeed, we found four-fold periodic intensity variations, with bimodal intensity centered along the substrate c-Si < 110> directions, in the X-ray scattering from a-Si on Si(001). These well-defined intensity variations disappeared entirely in X-ray scattering from edge-supported a-Si films, where there was no detectable anisotropy. |
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| Keywords: | Ion-implantation amorphization Amorphous silicon Low angle X-ray scattering |
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