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Phase transition, structural and thermodynamic properties of Mg2Si polymorphs
Authors:Yu Ben-Hai and Chen Dong
Institution:College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, China;College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, China
Abstract:The plane-wave pseudo-potential method within the framework of first principles is used to investigate the structural and elastic properties of Mg2Si in its intermediate pressure (Pnma) and high pressure phases (P63/mmc). The lattice constants, the band structures. The bulk moduli of the Mg2Si polymorphs are presented and discussed. The phase transition from anti-cotunnite to Ni2In-type Mg2Si is successfully reproduced using a vibrational Debye-like model. The phase boundary can be described as P=24.02994+3.93×10-3T-4.66816×10-5T2-2.2501×10-9T3+2.33786×1011T4. To complete the fundamental characteristics of these polymorphs we have analysed thermodynamic properties, such as thermal expansion and heat capacity, in a pressure range of 0--40 GPa and a temperature range of 0--1300 K. The obtained results tend to support the available experimental data and other theoretical results. Therefore, the present results indicate that the combination of first principles and a vibrational Debye-like model is an efficient scheme to simulate the high temperature behaviours of Mg2Si.
Keywords:semiconductors  thermodynamic properties  phase transition  band structure
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