RF MEMS开关工艺技术研究

RFMEMS开关是用MEMS技术形成的新型电路元件,与传统的半导体开关器件相比具有插入损耗低、隔离度大等优点,将对现有雷达和通信中RF结构产生重大影响。文章介绍了RFMEMS开关的基本工艺流程设计,工艺制作技术的研究。实验解决了种子层技术、聚酰亚胺牺牲层技术、微电镀技术的工艺难题,制作出了RFMEMS开关样品,基本掌握了RFMEMS器件的制作工艺技术。RFMEMS开关样品测试的技术指标为:膜桥高度2μm～3μm、驱动电压<30V、频率范围0～40GHz、插入损耗≤1dB、隔离度≥20dB,样品参数性能达到了设计要求。

The Study of RF MEMS Switch Technology

RF MEMS switches are new class circuit components fabricated utilizing MEMS technology.Compared with solid state switch,RF MEMS switches have advantages including a low insertion loss,high electrical isolation etc,and will provide a major impact on existing RF architectures in radar and communications. This paper presents process flows and fabrication technology of RF MEMS switch.It resolves some problems by experiments,example：seed layer, polyimide sacrificial layer and micro plating technology.The samples of RF MEMS switch.have been fabricated.The samples ofRF MEMS switch are measured,its result as follows,the actuation voltage is less than 30V, the insertion loss is less than 1dB, the microbridge highness is 2 u m-3 u m.the isolation is more than 20dB, the frequency is less than 40GHz.