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优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究
引用本文:高鸿楷 朱作云. 优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究[J]. 光子学报, 1993, 22(2): 189-192
作者姓名:高鸿楷 朱作云
作者单位:中国科学院西安光学精密机械研究所 710068(高鸿楷,龚平,王海滨),西安电子科技大学 710071(朱作云),西安电子科技大学 710071(李跃进)
摘    要:用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。

关 键 词:MOCVD  异质结  砷化镓  铝镓砷  
收稿时间:1992-05-11

INVESTIGATION OF MOCVD GROWTH OF GaAs AND ALGaAs ON SI SUBSTRATE
Gao Hongkai,Gong Ping,Wang HaibinXi'an Institue of Optics and Precision Mechanics,Academia Sinica,Zhu Zuoyun,Li YuejinXidian University,Xi'an. INVESTIGATION OF MOCVD GROWTH OF GaAs AND ALGaAs ON SI SUBSTRATE[J]. Acta Photonica Sinica, 1993, 22(2): 189-192
Authors:Gao Hongkai  Gong Ping  Wang HaibinXi'an Institue of Optics  Precision Mechanics  Academia Sinica  Zhu Zuoyun  Li YuejinXidian University  Xi'an
Affiliation:Gao Hongkai,Gong Ping,Wang HaibinXi'an Institue of Optics and Precision Mechanics,Academia Sinica,710068Zhu Zuoyun,Li YuejinXidian University,Xi'an 710071
Abstract:High guality epilayers of GaAs and AlGaAs on Si substrates were obtained in a self-made atmospheric pressure MOCVD system. After high temperature annealing of Si substrates, two-step growth method were used in growth of GaAs and AlGaAs epilayers, The epilayer of GaAs on Si were measured by x-ray double-crystal diffractometry. The half-width of the peak of the rocking curve of the GaAs epilayer was 200 arc sec. The half-width of the PL spectrum at 77K of GaAs and AlGaAs was 17meV and 24meV respectively.
Keywords:MOCVD   Heterojunction   GaAs  AlGaAs  Si
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