Submillimeter wave photoconductivity observation of shallow donors in In0.53Ga0.47As |
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| Authors: | M. N. Afsar Kenneth J. Button S. H. Groves |
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| Affiliation: | (1) Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, 02139 Cambridge, MA;(2) Lincoln Laboratory, Massachusetts Institute of Technology, 02173 Lexington, MA |
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| Abstract: | The hydrogen like 1s  2p (m=–1,0,+1) transitions of two donors have been observed in high intensity magnetic fields up to 8.5T. The m=–1 transitions ocurred between 2 cm–1 and 25 cm–1. The signature curves for donors in ternary semiconductor In0.53Ga0.47As have now been established.Work supported by the U.s. Air Force Office of Scientific Research under Contract # AFOSR-78-3708-DSupported by the National Science Foundation |
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| Keywords: | shallow donors ternary semiconductor photoconductivity GaAs |
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