| ATL结构在宽带VVA设计中的应用 |
| |
| 引用本文： | 杨强,祖梅.ATL结构在宽带VVA设计中的应用[J].无线电工程,2007,37(2):44-45. |
| |
| 作者姓名： | 杨强 祖梅 |
| |
| 作者单位： | 中国电子科技集团公司第13研究所,河北,石家庄,050051 |
| |
| 摘 要： | ATL(Artificial Transmission Line)是一种具有和实际传输线特性相似的二端口网络。采用场效应管制作的电压,可变衰减器由于等效电容效应影响较难在宽带范围内实现低的插入损耗指标。在分析场效应管等效模型的基础上,结合ATL结构的特点,设计并制作了一种宽带电压可变衰减器,在DC~20GHz内实现了插入损耗低于3dB、端口驻波小于2.0的较好微波性能,充分体现了ATL结构对降低衰减器插入损耗和改善端口驻波性能所起到的良好作用。
|
| 关 键 词： | ATL 场效应管等效模型 宽带 电压可变衰减器 |
| 文章编号： | 1003-3106（2007）02-0044-02 |
| 修稿时间： | 2006-11-12 |
Application of ATL Structure in Broadband VVA Design |
| |
| YONG Qiang,ZU Mei.Application of ATL Structure in Broadband VVA Design[J].Radio Engineering of China,2007,37(2):44-45. |
| |
| Authors: | YONG Qiang ZU Mei |
| |
| Institution: | The 13th Research Institute of CETC, Shijiazhuang Hebei 050051, China |
| |
| Abstract: | Artificial Transmission Line(ATL)is a four-port electrical network that can be used to simulate a real transmission line in one or more of respects.Based on the analysis of FET model and the equivalent structure of ATL,a DC～20 GHz VVA(Voltage Variable Attenuator)is designed and manufactured.The MW features such as insertion loss of less than 3dB and VSWR of less than 2.0 both at input and output ports are achieved in DC～20 GHz VVA,which shows the favorable role of ATL structure for decreasing insertion loss and improving port SWR. |
| |
| Keywords: | ATL |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
