An ab initio study of the electronic structure of SiH4, SiH3F and SiH2F2

Changes in molecular properties and in the electronic charge distribution of the molecules SiH₄, SiH₃F and SiH₂F₂ are studied within the framework of the ab initio Hartree—Fock SCF—LCAO—MO method. The ionisation potentials, calculated with the use of Koopmans' theorem, correlate well with the experimental vertical ionisation potentials. The combined s and p electronic populations of the Si atom are not substantially altered when adding Si 3d functions to the basis set.