p型Ga0.47In0.53AS接触层的生长

用过冷法在632-630℃生长了掺Zn的p型Ga0.47In0.53As接触层.研究了液相中Ga组分和Zn组分对GaxIn1-xAs/InP异质结晶格失配的影响,用一次外延技术生长了GaxIn1-xAs作接触层的GaInAsP/InP双异质结.

GROWTH OF p-TYPE Ga0.47In0.53AS CONTACT LAYER

P-Ga0.47In0.53 As contact layer (Zn-doped) was grown by supercooling in YW-1 type furnace with a carbon-slider beat, under a Pd-purified hydrogen ambient. In order to grow Zn-doped InxGa1-xAs layers lattice matched to InP by LPE, using a constant arsenic concentration in the liquidus (XAs1=5.7at.%), the influence of the composition of solution XGa1 and XZn1 on the lattice mismatch of GaxIn1-xAs/InP heterojunction Aa/a=(aGaxIn1-xAs-aInp)/aInp] have been investigated. The growth temperature Tg was kept at 632℃ in all cases. The lattice mismatch was measured by a doublecrystal x-ray diffraction method.The lattice mismatch as a function of growth solution composition XGa1, and XZa1 have been shown,respectively.It is found that surface morphology is poor, if the lattice mismatch of epi-layer at the room temperature is more than 5×10-4;but the wafer with a smooth surface is obtained,if the lattice mismatch of epi-layer has a negative value,even though its value is as high as the order of magnitude of-10-3. Because the lattice mismatch at the growth temperature is more than that at the room temperature.