| A comparative study of electroluminescence from Ge／SiO2 and Si／SiO2 films |
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| 引用本文： | 马书懿,陈辉,萧勇,马自军,孙爱民. A comparative study of electroluminescence from Ge／SiO2 and Si／SiO2 films[J]. 中国物理, 2004, 13(2): 264-267 |
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| 作者姓名： | 马书懿 陈辉 萧勇 马自军 孙爱民 |
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| 作者单位： | Department of Physics, Northwest Normal University, Lanzhou 730070, China;Department of Physics, Northwest Normal University, Lanzhou 730070, China;Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China;Department of Physics, Northwest Normal University, Lanzhou 730070, China;Department of Physics, Northwest Normal University, Lanzhou 730070, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 60276015), the Natural Science Foundation of Gansu Province (Grant No ZS021-A25-031-C), the Project of Chinese Ministry of Education, and the Foundation of Northwest Normal University, China (Grant No NWNU-KJCXGC-214). |
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| 摘 要： | Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed.
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| 关 键 词： | 锗／二氧化硅薄膜 硅／二氧化硅薄膜 双靶磁控溅射技术 电致发光 |
| 收稿时间： | 2003-02-21 |
| 修稿时间： | 2003-08-01 |
A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films |
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| Ma Shu-Yi,Chen Hui,Xiao Yong,Ma Zi-Jun and Sun Ai-Min. A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films[J]. Chinese Physics, 2004, 13(2): 264-267 |
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| Authors: | Ma Shu-Yi Chen Hui Xiao Yong Ma Zi-Jun Sun Ai-Min |
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| Affiliation: | Department of Physics, Northwest Normal University, Lanzhou 730070, China; Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China |
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| Abstract: | Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed. |
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| Keywords: | electroluminescence Ge/SiO_2 film Si/SiO_2 film |
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