Parallel solvers for the depletion region identification in metal semiconductor field effect transistors

In this work we are interested in a sufficiently accurate approximation of the steady-state potentials in a Metal Semiconductor Field Effect Transistor (MESFET), which can be obtained with the so-called depletion region approximation (see [5]). We propose a robust method based on the shape optimization techniques to analyze and compute the depletion boundary as a function of the applied voltage and the geometry material properties of the device. During the optimization process several intermediate direct problems are solved using the boundary element method (BEM). To accelerate the solutions of of these systems we use a strategy of subdividing the domain into a number of smaller subdomains [11,9]. The scheme is iterative and each subdomain is handled by a separate node in parallel. Test runs comparing the performance of the parallel with the serial code, and other numerical discussions are presented. AMS subject classification 65N55, 65N38, 65K10, 78A55. A. Nachaoui: Corresponding author.