硅、锗中氧的低温红外吸收

在6—300K下,利用红外傅里叶光谱仪研究了400—4000cm^-1间的硅、锗中氧的红外吸收。采用高分辨条件时,分辨率可达0.5cm^-1。研究了在低温下利用硅的1106cm^-1吸收峰和锗的855cm^-1吸收峰探测硅和锗氧含量的探测限和误差。若样品厚度为2cm,估计在20K下,硅中氧含量探测限～9.6×10¹⁴氧原子·cm^-3,锗中氧含量探测限～3.0×10¹⁴氧原子·cm^-3。同时,对不同生长条件下直拉锗单晶的氧含量进行了研究,并与用锂沉淀法所求得的锗中氧含量加以比较。对不同氧含量的硅样品的1106cm^-1吸收峰在6—300K的变化进行了观察和讨论。 关键词：

INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES

Infrared Absorption measurements of oxygen in silicon and germanium were made with IE Fourier Transform Spectrometer at temperatures between 6 K and 300 K in the region of 400-4000cm^-1. Resolution was up to 0.5cm^-1 when high resolution conditions were adopted.Detection limit and sources of error on oxygen concentration of silicon and germanium determined by infrared absorption measurement at low temperature were identified. Using a 2 cm thick sample, the- lower limit of detectability for oxygen at 20 K is estimated to be 9.6×10¹⁴ oxygen atom. cm^-3 and 3.0×10¹⁴ oxygen atom. cm^-3 in silicon and germanium respectively. The oxygen concentration of CZ germanium single crystals with different growth conditions was also studied and these results determined by IE measurements havebeen investigated and discussed at temper-lithium precipitation technique.Temperature-dependent fine structure of 1106 cm^-3 absorption band of silicon with different oxygen concentration have been investigated and discussed at temper atures between 6 K and 300 K.