Negative dynamic mobility of electrons in silicon in the far-infrared range |
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| Authors: | R. Brazis L. Asadauskas R. Raguotis M. R. Siegrist |
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| Affiliation: | (1) Semiconductor Physics Institute, A. Goštauto 11, LT-2600 Vilnius, Lithuania;(2) Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse Ecole Polytechnique Fédérale de Lausanne CRPP-PPB, 1015 Lausanne, Switzerland |
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| Abstract: | We performed Monte Carlo simulation of electron response to a strong pumping wave (443 GHz) and weak signal harmonic waves (886 and 1329 GHz) in silicon. A negative dynamic conductivity is found to arise for 1329 GHz above a threshold value of the pumping wave amplitude and below a maximum value of the signal wave amplitude in a limited range of phase difference between the waves. |
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| Keywords: | Far infrared response semiconductor n-Si wave amplification third harmonic generation |
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