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8毫米雪崩注入锁定放大器
引用本文:章国豪.8毫米雪崩注入锁定放大器[J].固体电子学研究与进展,1993,13(4):362-366.
作者姓名:章国豪
作者单位:南京电子器件研究所 210016
摘    要:简述了注入锁定放大器的基本原理。对基本电路结构进行合理选择与改进,实现电路与崩越器件的最佳阻抗匹配。采用特殊措施抑制崩越管特有的低频振荡现象,防止器件烧毁。所研制的8毫米雪崩注入锁定放大器在33~36GHz内,最大输出功率600mW,带宽达1 000MHz,增益13dB。

关 键 词:崩越器件  毫米波技术  注入锁定放大器

8 mm IMPATT Injection-Locked Amplifier
Zhang Guohao.8 mm IMPATT Injection-Locked Amplifier[J].Research & Progress of Solid State Electronics,1993,13(4):362-366.
Authors:Zhang Guohao
Abstract:The basic principle of an injection-locked amplifier is simply stated. Its rational structure was selected and modified to achieve the optimum matching between the device and the circuit. A special method was used to suppress low-fre-quency oscillation. An 8 mm IMPATT injection-locked amplifier has been deve-loped. In 33-36 GHz band,maximum output power of 600 mW,bandwidth of 1000 MHz and typical gain of 13 dB have been achieved.
Keywords:IMPATT Devices  Millimeter Wave Technology  Injection-locked Amplifiers  
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