A tunable light source in the 370 nm range based on an optically stabilized,frequency-doubled semiconductor laser

A tunable harmonic output power of 18 W at a wavelength of =370 nm is obtained by resonance-enhanced frequency doubling of an optically-stabilized semiconductor laser. A commercially available AlGaAs laser diode which emits a maximum power of 10 mW at =740 nm is operated in an extended-cavity configuration. Dispersion prisms are used in the extended cavity to obtain longitudinal-mode selection with low loss of optical power. The output is focussed into an optically isolated high-finesse ring resonator which contains a LiIO₃ crystal for second-harmonic generation. One potential application of this laser source is the optical excitation and laser cooling of ytterbium in an ion trap. In a related demonstration experiment, the frequency-doubled diode laser is applied to excite the =369.5 nm ²S_1/2-²P_1/2 transition of ytterbium ions in a hollow-cathode discharge.