Bis(tri-tert-butylsilyl)silylene: triplet ground state silylene |
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| Authors: | Sekiguchi Akira Tanaka Takashi Ichinohe Masaaki Akiyama Kimio Tero-Kubota Shozo |
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| Affiliation: | Department of Chemistry, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan. sekiguch@staff.chem.tsukuba.ac.jp |
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| Abstract: | Upon irradiation with lambda = 254 nm light over the temperature range of 9-80 K, methylcyclohexane glass matrixes of 1a and 1b gave a characteristic broad EPR signal at 845 mT (X-band, 9.4 GHz) due to bis(tri-tert-butylsilyl)silylene, (tBu3Si)2Si: (2). The signal intensity as a function of temperature (9-80 K) gave a linear relation, and the spin multiplicity of 2 in the ground state was established to be a triplet. Product analysis, from which disilacyclobutane derivative 3 and dihydrosilane (tBu3Si)2SiH2 (4) were formed, also supports the conclusion about the multiplicity of 2. |
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