Nitridation of thin SiO2 films in N2 and NH3 plasmas |
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Authors: | P Fazan M Dutoit M Ilegems |
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Institution: | Institute for Microelectronics, Swiss Federal Institute of Technology, CH 1015, Lausanne, Switzerland |
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Abstract: | A low-temperature (700°C) plasma-enhanced nitridation process which improves the dielectric breakdown of thin silicon dioxide (SiO2) layers is presented. It uses a new, production compatible, parallel plate plasma reactor working at low RF frequencies. Nitrided oxides produce less charge trapping under high field stress, higher breakdown charge and a tighter distribution of breakdown fields than pure SiO2. More nitrogen is incorporated in films treated in a NH3 plasma than in a N2 plasma. However, the latter present better electrical properties. |
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