Opto-electronic properties of p- and n-type delafossite,CuFeO2 |
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| Institution: | 1. School of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, China;2. School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;1. Center for Innovative Materials and Architectures, Ho Chi Minh City, Viet Nam;2. Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, Viet Nam;3. Vietnam National University, Ho Chi Minh City, Viet Nam;4. Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, Viet Nam;5. Faculty of Physics and Engineering Physics, University of Science, Ho Chi Minh City, Viet Nam;6. Department of Physics, University of Ulsan, Ulsan 13557, South Korea;7. Department of Physics, Pusan National University, Busan 46241, South Korea;8. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Japan;1. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany;2. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany;3. Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853-1501, USA;4. Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853-1501, USA;1. Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085, India;2. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603102, India;3. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom;1. Solid State Physics Dept., National Research Centre, 12311, Dokki, Giza, Egypt;2. Physics Department, Faculty of Girls, Ain Shams University, Heliopolis, Cairo, Egypt |
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