Comparison of site-specific densities of states of Ga and As in cleaved and sputtered GaAs(110) by means of Auger line shapes |
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| Authors: | G.D. Davis D.E. Savage M.G. Lagally |
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| Affiliation: | Department of Metallurgical and Mineral Engineering and Materials Science Center, University of Wisconsin, Madison, Wisconsin 53706 U.S.A. |
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| Abstract: | Site-specific densities of states for the Ga and As sites in GaAs(110) are derived from the M1M4,5V Auger lines and compared for the cleaved and sputtered surfaces. X-ray photoelectron spectroscopy, scanning electron microscopy, and LEED results for these surfaces are also presented. The results are interpreted in terms of a structure for the sputtered surface that consists of a two-phase mixture of Ga and disordered GaAs. |
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