Deep hole trap level of nitrogen-doped ZnSe grown by metalorganic vapor phase epitaxy

We investigated the hole trap level of nitrogen-doped ZnSe grown by a metalorganic vapor phase epitaxy method. The deep level transient spectroscopy (DLTS) signal and the C-V profile were measured to obtain the trap level, the capture cross section and the trap concentration. A deep hole trap level of about 1 eV from a valence band (labeled TLIS) was extracted from the tail of the DLTS peak. The distributions of the capture cross section and the trap level of the samples for different growth conditions were drawn in a figure to investigate the validity of the resolution of the DLTS signal. The origin of TLIS is thought to be in relation to the ionized acceptor or the charged acceptor-like localized defects.