| 1.3μmInGaAsP/InP DCC结构半导体激光器 |
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| 引用本文： | 刘益春,张月清.1.3μmInGaAsP/InP DCC结构半导体激光器[J].发光学报,1990,11(1):75-78. |
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| 作者姓名： | 刘益春 张月清 |
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| 作者单位： | 1. 东北师范大学物理系;2. 中国科学院长春物理研究所 |
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| 摘 要： | 用普通的LPE技术,严格控制两个有源区组分的匹配、各层掺杂浓度及生长条件,获得了1.3μm双载流子限制DCC结构半导体激光器(T0=150K)。此结构中第二有源区形成的势阱对热载流子具有二次限制作用,增加了第一个有源区泄漏和俄歇过程产生的过热载流子在第二有源区内辐射复合参与激射的机会;降低了这些热载流子进入限制层产生损耗的几率,提高了T0值,说明了DCC结构激光器阈值以下特征EL光谱半宽度与注入电流密度的关系并讨论了两个有源区组分匹配及薄夹层厚度对特征温度T0和阈值电流的影响。
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| 关 键 词： | 半导体 激光器 DCC结构 InGaAsP |
| 收稿时间： | 1988-11-06 |
1.3μm InGaAsP/InP DCC STRUCTURE SEMICONDUCTOR LASER |
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| Liu Yichun,Zhang Yueqing,He Shengfu,Zhu Youcai.1.3μm InGaAsP/InP DCC STRUCTURE SEMICONDUCTOR LASER[J].Chinese Journal of Luminescence,1990,11(1):75-78. |
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| Authors: | Liu Yichun Zhang Yueqing He Shengfu Zhu Youcai |
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| Institution: | 1. Department of Physics, Northeast Normal University;2. Changchun Institute of Physics, Academia Sinica |
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| Abstract: | It is achieved to obtain 1.3nm double carrier confine(DCC) structure semiconductor lasei with high T0 by using general LPE technique. Composition matching of two active layers, doping concentration and growing condition are strictly controlled. The radiative recombination probability of super hot carriers which are generated by Augei recombination and leaked from the first active layer is increased, so that the carrieis leaking into InP clad layer are decreased, The T0 of DCC structure InGaAsP/InP semiconductor laser is as high as 150K in the operating range of 293-343K. The relationship between spontaneous emission spectrum and injected current density for DCC lasei is discussed. The influence of the composition matching of active layeis and the thickness of thin sandwich layer on the threshold current density and T0 is analysed. |
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