On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures |
| |
| Affiliation: | 1. Key Laboratory of Energy Materials Chemistry, Ministry of Education, Key Laboratory of Advanced Functional Materials, Autonomous Region, Institute of Applied Chemistry, Xinjiang University, Urumqi 830046, Xinjiang, PR China;2. State Key Lab of Fine Chemicals, School of Chemical Engineering, Liaoning Key Lab for Energy Materials and Chemical Engineering, Dalian University of Technology, Dalian 116024, Liaoning, PR China;1. Hurvitz Brain Sciences Research Program, Sunnybrook Research Institute, Sunnybrook Health Sciences Centre, Toronto, Ontario, Canada;2. Department of Medicine, Division of Neurology, University of Toronto, Toronto, Ontario, Canada;3. Sleep Laboratory, Sunnybrook Health Sciences Centre, Toronto, Ontario, Canada;4. Dalla Lana School of Public Health, University of Toronto, Toronto, Ontario, Canada;1. Department of Civil and Architectural Engineering, Sultan Qaboos University, P.O. Box 33, Al-Khoud 123, Muscat, Oman;2. Process Engineering Department, International Maritime College, Sohar, Oman;3. Department of Civil and Environmental Engineering, Manhattan College, 4513 Manhattan College Parkway, Riverdale, NY, 10471, USA;4. Civil and Environmental Engineering, University of Alberta, Edmonton, Alberta, T6G1H9, Canada;5. Institute of Tropical Aquaculture and Fisheries Research (AKUATROP), Universiti Malaysia Terengganu, 21030 Kuala Nerus, Terengganu, Malaysia;6. Department of Agricultural Machinery Engineering, Faculty of Agricultural Engineering and Technology, College of Agriculture & Natural Resources, University of Tehran, Karaj, Iran;1. Department of Civil and Architectural Engineering, Sultan Qaboos University, P.O. Box 33, Al-Khoud 123, Muscat, Sultanate of Oman;2. Department of Petroleum and Chemical Engineering, Sultan Qaboos University, P.O. Box 33, Al-Khoud 123, Muscat, Sultanate of Oman;3. Nanotechnology Research Center, Sultan Qaboos University, P.O. Box 17, Al-Khoud 123, Muscat, Sultanate of Oman |
| |
| Abstract: | Experiment shows that in AlGaAs/GaAs heterostructures the sheet electron concentration remains almost constant up to a certain temperature, while it increases at higher temperatures. We attempt an interpretation of this temperature dependence, taking into account the fact that in the bulk, n-AlGaAs deep and shallow donors exist, which independently and by different mechanisms provide electrons to the different conduction band minima of the bulk n-AlGaAs, and contribute to the formation of the Q2DEG. We calculate the electronic states of this structure, the Q2DEG and the bulk concentrations, and the corresponding mobilities as a function of temperature. Our numerical results are in an excellent agreement with experimental data.PACS: |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
