Weak localization in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs wires |
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| Institution: | 1. Scripps Institution of Oceanography, UC San Diego, 9500 Gilman Drive, La Jolla, CA 92039-0209, USA;2. Faculty of Science, Engineering and Technology, University of Tasmania, Hobart 7001, Australia |
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| Abstract: | The phase coherence length LØ, its temperature dependence and the spin-orbit scattering length LSO in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs wires fabricated by electron-beam lithography and CH4/H2 Reactive Ion Etching (RIE), were extracted by fitting a 1-dimensional weak localization theory to two-terminal measurements in the temperature range between 2 K and 50 K. The scattering mechanism was found to be Nyquist (electron-electron collisions with small energy transfer). |
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