Vertical conduction in thin Si/CaF2/Si structures |
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| Institution: | 1. Criminalistic Institute of Pernambuco, Recife, Brazil;2. Department of Fundamental Chemistry, Federal University of Pernambuco, Recife, Brazil;3. Department of Chemical Engineering, Federal University of Pernambuco, Recife, Brazil |
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| Abstract: | Electrical characteristics of thin (∼100Å), single barrier Si/CaF2/Si heterostructures have been measured for the first time for both A and B phase CaF2. I(V,T) measurements for different thickness CaF2 barriers show characteristics that are consistent with conduction through defect sites in the CaF2 layer. The B-phase CaF2 exhibits far more defects than the A -phase material. Measurements of different size mesas indicate a defect density on the order of one per 1000μm2 in the 100Å barrier thickness A-phase material. |
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