Exciton oscillator strength in GaAs/AlAs superlattices near type I-type II transition |
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| Institution: | 1. School of Chemical Engineering, Dalian University of Technology, Dalian, 116024, China;2. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, Dalian, 116024, China;1. Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People’s Republic of China;2. School of Physics, Southeast University, Nanjing 211189, People’s Republic of China;3. Wuxi Branch of Jiangsu Province Special Equipment Safety Supervision and Inspection Institute, Wuxi 214174, People’s Republic of China;4. Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189, People’s Republic of China;1. University of Applied Sciences Jena, Dept. of SciTec, Carl-Zeiss-Promenade 2, 07745 Jena, Germany;2. Federal Institute of Materials Research and Testing (BAM), Unter den Eichen 87, 12205 Berlin, Germany |
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| Abstract: | We present resonance reflectivity measurements performed on graded GaAs/AlAs superlattices in the transitional region from type I to type II. A theory of exciton states and exciton oscillator strength is developed making allowance for the mixing of Γ1, X1 and X3 electron states in the superlattice. Experimental and theoretical results are compared taking into account effects of superlattice imperfections. |
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