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In-Ga合金源汽相外延生长In_xGa_(1-x)As体系的热力学分析
引用本文:徐宝琨,李钟华,宋利珠,赵慕愚.In-Ga合金源汽相外延生长In_xGa_(1-x)As体系的热力学分析[J].半导体学报,1989,10(4):301-308.
作者姓名:徐宝琨  李钟华  宋利珠  赵慕愚
作者单位:吉林大学电子科学系,吉林大学电子科学系,吉林大学电子科学系,吉林大学电子科学系 化学系,长春,化学系,长春,化学系,长春,化学系,长春
摘    要:本文采用独立组元法对In-Ga合金源汽相外延生长In_xGa_(1-x)As体系的平衡状态作了热力学计算和分析,所得结果对认识该体系外延生长的规律性及改进工艺条件有一定参考价值.

关 键 词:热力学计算  气相外延  铟镓砷

Thermodynamic Study of Vapor Phase Epitaxy of In_xGa_(1-x)As Using An In-Ga Alloy Source
Xu Baokun/Jilin University,Changchun,ChinaLi Zhonghua/Jilin University,Changchun,ChinaSong Lizhu/Jilin University,Changchun,ChinaZhao Muyu/Jilin University,Changchun,China.Thermodynamic Study of Vapor Phase Epitaxy of In_xGa_(1-x)As Using An In-Ga Alloy Source[J].Chinese Journal of Semiconductors,1989,10(4):301-308.
Authors:Xu Baokun/Jilin University  Changchun    ChinaLi Zhonghua/Jilin University  Changchun    ChinaSong Lizhu/Jilin University  Changchun    ChinaZhao Muyu/Jilin University  Changchun    China
Institution:Xu Baokun/Jilin University,Changchun,130021,ChinaLi Zhonghua/Jilin University,Changchun,130021,ChinaSong Lizhu/Jilin University,Changchun,130021,ChinaZhao Muyu/Jilin University,Changchun,130021,China
Abstract:The vapor phase epitaxy of In_xGa_(1-x)As using an In-Ga alloy source has been studiedthermodynamically.Some useful conclusions for the technology have been obtained from thecalculations.
Keywords:Thermodynamic calculation  Vapor phase epitaxy  Indium gallium arsenide solid solution
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