Enhancement of nonlinear optical response of exciton–polaritons by controlling thickness of GaAs layer

We demonstrate a remarkable thickness dependence of nonlinear optical response of exciton–polaritons in GaAs thin films by degenerate four-wave mixing (DFWM) at low temperature (T=5 K). High-quality samples of layer thickness from 80 to 200 nm were grown by molecular beam epitaxy. Confined mode of the exciton–polariton dominantly contributed to the reflection spectra, which were examined by the calculation using a transfer matrix method. The DFWM intensity at exciton resonance was enhanced at a particular thickness (110 nm). This thickness dependence is in good agreement with the nonlocal theory, which shows a remarkable size dependence of the internal field relevant to the confined mode of the exciton–polaritons.