首页 | 本学科首页   官方微博 | 高级检索  
     检索      

低压驱动RF MEMS开关设计与模拟
引用本文:闫闱.低压驱动RF MEMS开关设计与模拟[J].现代电子技术,2010,33(17):111-112.
作者姓名:闫闱
作者单位:南京信息工程大学,电子与信息工程学院,江苏,南京,210044
摘    要:RF MEMS开关存在驱动电压高、开关时间长等问题,利用ANSYS对电容式开关加以改进,设计扭转臂杠杆与打孔电容膜相结合的新型开关。通过静电耦合与模态分析的仿真,可以在理论上改善RF MEMS开关的射频性能,并有工艺的可行性。

关 键 词:RF  MEMS开关  ANSYS  优化设计  驱动电压

Design and Simulation of Low-voltage Driving RF MEMS Switches
YAN Wei.Design and Simulation of Low-voltage Driving RF MEMS Switches[J].Modern Electronic Technique,2010,33(17):111-112.
Authors:YAN Wei
Institution:YAN Wei (School of Electronics and Information Engineering, Nanjing University of Information Seience&Technology, Nanjing 210044, China)
Abstract:As RF MEMS switches have shortcomings of high-voltage drive and long switching time, a new switch with reverse arm lever and punched capacitance membrane is designed by means of improving the capacitive switches with ANSYS. The RF performance of RF MEMS switches is improved theoretically by the simulation of electrostatic coupling and the modal analysis. The feasibility of the technique process is discussed.
Keywords:ANSYS
本文献已被 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号